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2N6790 IRFF220
MECHANICAL DATA Dimensions in mm (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
N-CHANNEL POWER MOSFET ENHANCEMENT MODE
4.06 (0.16) 4.57 (0.18)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
FEATURES
* REPETITIVE AVALANCHE RATING * SIMPLE DRIVE REQUIREMENTS
5.08 (0.200) typ.
* HERMETICALLY SEALED
2.54 (0.100)
2 1
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.53 (0.021)
3
APPLICATIONS
* FAST SWITCHING
45
* MOTOR CONTROLS * POWER SUPPLIES
Pin 3 - Drain and Case
TO39 Package (TO-205AF)
Pin 1 - Source Underside View Pin 2 - Gate
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VDS ID @Tcase = 25C ID @Tcase = 100C IDM VGS PD@ Tcase = 25C RJ-C RJ-A TJ,Tstg Lead Temperature Drain Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Gate Source Voltage Maximum Power Dissipation Thermal Resistance Junction To Case Thermal Resistance Junction To Ambient Operating and Storage Temperature Range ( 1.6mm from case for 10 secs) 200V 3.5A 2.25A 14A 20V 20W 6.25C/W 175C/W -55 to +150C 300C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6445 Issue 1
2N6790 IRFF220
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain - Source Breakdown Voltage VGS(th)* Gate Threshold Voltage IGSSF IGSSR IDSS Gate Body Leakage Forward Gate Body Leakage Reverse Zero Gate Voltage Drain Current VGS = 0 VDS = VGS VGS = 20V VGS = -20V VDS = 160V. VGS = 10V VGS = 10V VDS = 15V VGS = 0 f = 1.0MHz VDD = 100V RG = 7.5
(MOSFET switching times are essentially independent of operating temperature.)
Test Conditions
ID = 1.0mA ID = 250A
Min.
200 2.0
Typ.
Max.
Unit
V 4.0 100 -100 nA A S( ) 260 100 30 pF 40 50 50 50 ns
VGS =0 TC = 125C ID = 2.25A ID = 3.5A IDS = 2.25A VDS = 25V 1.5
25 250 0.80 0.92
RDS(on)* Static Drain Source On-State Resistance gfs* Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate To Source Charge Gate To Drain ("Miller") Charge
ID = 3.5A
VGS = 10V VDS = 100V
ID = 3.5A
8.0 0.9 2.3
,
14.3 3.0 9.0 V 3.5 A nC
IS ISM VSD trr QRR
BODY- DRAIN DIODE RATINGS & CHARACTERISTICS Modified MOS POWER Continuous Source Current (Body Diode) Source Current (Body Diode) Diode Forward Voltage* Reverse Recovery Time Reverse Recovery Charge
symbol showing the intergal
/ 5
P-N junction rectifier.
14 1.5 400 4.3 V ns C
IS = 3.5A TJ = 25C IF = 3.5A
VGS = 0 TJ = 25C
di / dt = 100A/s VDD = 50V
Notes * Pulse Test: Pulse Width 300s, 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6445 Issue 1

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